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High electron mobility oxide TFT muaj peev xwm tsav 8K OLED TV cov ntxaij vab tshaus

Luam tawm rau Lub Yim Hli 9, 2024, 15:30 AM EE Times Nyiv

 

Ib pab pawg tshawb fawb los ntawm Nyij Pooj Hokkaido University tau koom ua ke tsim "oxide nyias-zaj duab xis transistor" nrog lub zog hluav taws xob ntawm 78cm2 / Vs thiab kev ruaj ntseg zoo nrog Kochi University of Technology. Nws yuav muaj peev xwm tsav cov ntxaij vab tshaus ntawm lwm tiam 8K OLED TVs.

Qhov saum npoo ntawm cov active txheej nyias zaj duab xis yog them nrog ib tug tiv thaiv zaj duab xis, zoo heev txhim kho stability

Thaum Lub Yim Hli 2024, pawg tshawb fawb suav nrog Assistant xibfwb Yusaku Kyo thiab xibfwb Hiromichi Ota ntawm Lub Tsev Haujlwm Tshawb Fawb Txog Kev Tshawb Fawb Hluav Taws Xob, Hokkaido University, koom tes nrog xibfwb Mamoru Furuta ntawm Tsev Kawm Ntawv Kev Tshawb Fawb thiab Tshuab, Kochi University of Technology, tshaj tawm tias lawv muaj. tsim ib qho "oxide nyias-zaj duab xis transistor" nrog lub zog hluav taws xob ntawm 78cm2 / Vs thiab kev ruaj ntseg zoo heev. Nws yuav muaj peev xwm tsav cov ntxaij vab tshaus ntawm lwm tiam 8K OLED TVs.

Tam sim no 4K OLED TVs siv oxide-IGZO nyias-zaj duab xis transistors (a-IGZO TFTs) los tsav cov ntxaij vab tshaus. Lub zog hluav taws xob ntawm qhov transistor yog li 5 txog 10 cm2 / Vs. Txawm li cas los xij, txhawm rau tsav lub vijtsam ntawm lwm tiam 8K OLED TV, yuav tsum muaj oxide nyias-film transistor nrog electron txav ntawm 70 cm2 / Vs lossis ntau dua.

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Assistant xibfwb Mago thiab nws pab neeg tau tsim TFT nrog lub zog hluav taws xob ntawm 140 cm2 / Vs 2022, siv cov yeeb yaj kiab nyias ntawmIndium oxide (In2O3)rau active txheej. Txawm li cas los xij, nws tsis tau muab tso rau kev siv vim tias nws qhov kev ruaj ntseg (kev ntseeg siab) tsis zoo vim yog qhov adsorption thiab desorption ntawm cov roj molecules hauv huab cua.

Lub sijhawm no, pab pawg tshawb fawb tau txiav txim siab los npog lub ntsej muag ntawm cov txheej txheem nyias nyias nrog cov yeeb yaj kiab tiv thaiv kom tsis txhob muaj roj los ntawm adsorbed hauv huab cua. Cov txiaj ntsig kev sim tau pom tias TFTs nrog cov yeeb yaj kiab tiv thaiv ntawmyttrium oxidethiaberbium oxide hmoovnthuav tawm tsis tshua muaj siab stability. Ntxiv mus, lub zog hluav taws xob yog 78 cm2 / Vs, thiab cov yam ntxwv tsis hloov txawm tias qhov hluav taws xob ntawm ± 20V tau thov rau 1.5 teev, tseem nyob ruaj khov.

Ntawm qhov tod tes, kev ruaj ntseg tsis tau txhim kho hauv TFTs uas siv hafnium oxide lossisaluminium oxideraws li cov yeeb yaj kiab tiv thaiv. Thaum lub atomic teeb pom kev zoo siv lub tshuab ntsuas hluav taws xob, nws tau pom tiasindium oxide hmoov thiabyttrium oxide tau kaw nruj nreem rau ntawm qib atomic (heteroepitaxial loj hlob). Hauv qhov sib piv, nws tau lees paub tias hauv TFTs uas nws qhov kev ruaj ntseg tsis txhim kho, qhov cuam tshuam ntawm indium oxide thiab cov yeeb yaj kiab tiv thaiv yog amorphous.