Ishicilelwe ngo-Agasti 9, 2024, ngo-15: 30 Ee Times Japan
Iqembu elicwaningayo elivela eJapan Hokkaido University lakha ngokuhlangene i- "Oxide Thin-Film Transicor" ngokuhamba nge-elektroni ka-78cm2 / vs nokuqina okuhle kwe-Kochi University of Technology. Kuzokwazi ukushayela izikrini ze-8K Gwest-Generation Oled TVs.
Ingaphezulu lefilimu eliphansi elisebenzayo limbozwe ngefilimu evikelayo, ithuthukisa kakhulu ukuqina
Ngo-Agasti 2024, iqembu elicwaningayo kufaka uSolwazi yusaku Kyo noProfessor Hiromichi Ota ye-Electonity Institute of Electronic Science, eHokkaido University, bamemezele ukuthi bathathe ama-transistor "we-Oxide Thin Kuzokwazi ukushayela izikrini ze-8K Gwest-Generation Oled TVs.
Ama-TV we-4K aled anele asebenzisa ama-oxide-igzo amafilimu ama-transistors (ama-a-igzo tfts) ukushayela izikrini. Ukuhamba nge-elektroni kwalolu hlaka kungama-5 kuye kwayi-10 cm2 / vs. Kodwa-ke, ukushayela isikrini se-TV yesizukulwane esilandelayo se-8K Oled TV, i-oxide amafilimu amafilimu ngokuhamba nge-elektroni ka-70 cm2 / vs noma ngaphezulu kuyadingeka.
Umsizi uSolwazi Mago nethimba lakhe bathuthukise i-TFT ngokuhamba nge-elektroni ka-140 cm2 / vs 2022, besebenzisa ifilimu elincanyana leI-Indium Oxide (in2o3)ngesendlalelo esisebenzayo. Kodwa-ke, ayizange ibekwe ekusetshenzisweni okusebenzayo ngoba ukuqina kwayo (ukuthembeka) bekumpofu kakhulu ngenxa ye-adsorption kanye nenhlawulo ye-molecule yegesi emoyeni.
Kulokhu, iqembu lokucwaninga lanquma ukumboza ingaphezulu lesendlalelo esincane esisebenzayo ngefilimu evikelayo ukuvikela igesi ekubeni yi-adsorbed emoyeni. Imiphumela yokuhlola ikhombisile ukuthi ama-TFT anamafilimu avikelayoytttrium oxidena-I-Erbium oxidekuboniswe ukuqina okukhulu kakhulu. Ngaphezu kwalokho, ukuhamba kwe-elektroni kwakungu-78 cm2 / vs, futhi izici azizange ziguquke noma ngabe ivola le-± 20V lalisetshenziswa amahora angu-1.5, asele.
Ngakolunye uhlangothi, ukuqina akuzange kuthuthuke kuma-TFTS asebenzisa i-hafnium oxide nomaI-Aluminium OxideNjengamafilimu avikelayo. Lapho ilungiselelo le-athomu libonwa kusetshenziswa ama-microscope we-elektroni, kwatholakala ukuthiI-Indium Oxide na-ytttrium oxide zazihlanganiswe ngokuqinile ezingeni le-athomu (ukukhula kwe-heteoepitaxitaxial). Ngokuphambene nalokho, kwaqinisekiswa ukuthi kuma-TFTs awo ukuqina kwawo akuzange kuthuthuke, isikhombimsebenzisi phakathi kwe-Indium Oxide nefilimu evikelayo kwakungu-Amorphous.