Ishicilelwe ngo-Agasti 9, 2024, ngo-15:30 EE Times Japan
Iqembu labacwaningi abavela eNyuvesi yase-Japan yase-Hokkaido lenze ngokuhlanganyela “i-oxide thin-film transistor” ehamba nge-electron engu-78cm2/Vs kanye nokuzinza okuhle kakhulu ne-Kochi University of Technology. Kuzokwazi ukushayela izikrini zesizukulwane esilandelayo sama-TV we-8K OLED.
Ubuso befilimu encane yongqimba esebenzayo ihlanganiswe nefilimu evikelayo, ithuthukisa kakhulu ukuzinza
Ngo-Agasti 2024, iqembu labacwaningi elihlanganisa uMsizi uSolwazi Yusaku Kyo kanye noSolwazi Hiromichi Ota weResearch Institute for Electronic Science, eHokkaido University, ngokubambisana noSolwazi Mamoru Furuta weSikole Sesayensi Nobuchwepheshe, iKochi University of Technology, bamemezele ukuthi ithuthukise i-“oxide thin-film transistor” ene-electron mobility engu-78cm2/Vs kanye nokuzinza okuhle kakhulu. Kuzokwazi ukushayela izikrini zesizukulwane esilandelayo sama-TV we-8K OLED.
Ama-TV amanje e-4K OLED asebenzisa i-oxide-IGZO thin-film transistors (a-IGZO TFTs) ukushayela izikrini. Ukuhamba kwe-electron yale transistor cishe ku-5 kuya ku-10 cm2 / Vs. Nokho, ukuze ushayele isikrini se-TV yesizukulwane esilandelayo esingu-8K OLED, i-transistor yefilimu elincanyana eliyi-oxide elinokunyakaza kwe-electron engu-70 cm2/Vs noma ngaphezulu kuyadingeka.
Umsizi uSolwazi Mago nethimba lakhe bakha i-TFT ene-electron mobility engu-140 cm2/Vs 2022, besebenzisa ifilimu elincanyanai-idium oxide (In2O3)okwesendlalelo esisebenzayo. Kodwa-ke, ayizange isetshenziswe ngendlela engokoqobo ngenxa yokuthi ukuzinza kwayo (ukuthembeka) kwakubi kakhulu ngenxa yokukhangiswa nokuncishiswa kwama-molecule egesi emoyeni.
Ngalesi sikhathi, iqembu locwaningo linqume ukumboza ubuso bongqimba oluncane olusebenzayo ngefilimu evikelayo ukuze kuvinjwe igesi ukuthi ingangeni emoyeni. Imiphumela yokuhlolwa ibonise ukuthi ama-TFT anamafilimu okuvikela wei-yttrium oxidefuthii-erbium oxideibonise ukuzinza okuphezulu kakhulu. Ngaphezu kwalokho, ukuhamba kwe-electron kwakungu-78 cm2/Vs, futhi izici azizange zishintshe ngisho nalapho i-voltage engu-± 20V isetshenziswa amahora angu-1.5, ihlala izinzile.
Ngakolunye uhlangothi, ukuzinza akuzange kuthuthuke kuma-TFT asebenzisa i-hafnium oxide nomai-aluminium oxidenjengamafilimu okuvikela. Lapho ukuhlelwa kwe-athomu kubonakala kusetshenziswa isibonakhulu se-electron, kwatholakala ukuthii-idium oxide futhii-yttrium oxide zaziboshwe ngokuqinile ezingeni le-athomu (ukukhula kwe-heteroepitaxial). Ngokuphambene nalokho, kwaqinisekiswa ukuthi kuma-TFTs ukuzinza kwawo akuzange kuthuthuke, ukuxhumana phakathi kwe-idium oxide nefilimu yokuzivikela kwakuyi-amorphous.