Ipapashwe ngo-Agasti 9, 2024, ngo-15:30 EE Times Japan
Iqela lophando elivela kwiYunivesithi yaseHokkaido yaseJapan liye laqulunqa ngokudibeneyo "i-oxide thin-film transistor" ene-electron mobility ye-78cm2 / Vs kunye nokuzinza okuhle kakhulu kunye neYunivesithi yaseKochi yeThekhnoloji. Kuya kuba nakho ukuqhuba izikrini ze-8K OLED TV yesizukulwana esilandelayo.
Umphezulu womgca osebenzayo wefilimu encinci ihlanganiswe nefilimu ekhuselayo, iphucula kakhulu ukuzinza
Ngo-Agasti ka-2024, iqela lophando eliquka uMncedisi uNjingalwazi uYusaku Kyo kunye noNjingalwazi uHiromichi Ota weZiko loPhando lweSayensi yezobuNzululwazi, iYunivesithi yaseHokkaido, ngokubambisana noNjingalwazi uMamoru Furuta weSikole seSayensi neTekhnoloji, iYunivesithi yaseKochi yeTekhnoloji, babhengeze ukuba iphuhlise i-"oxide thin-film transistor" ene-electron mobility ye-78cm2 / Vs kunye nokuzinza okuhle kakhulu. Kuya kwenzeka ukuba uqhube izikrini ze-8K OLED TV yesizukulwana esilandelayo.
Ii-TV ze-4K OLED zangoku zisebenzisa i-oxide-IGZO thin-film transistors (a-IGZO TFTs) ukuqhuba izikrini. Ukuhamba kwe-electron yale transistor malunga ne-5 ukuya kwi-10 cm2 / Vs. Nangona kunjalo, ukuqhuba isikrini se-TV ye-8K ye-OLED yesizukulwana esilandelayo, i-oxide ye-transistor encinci yefilimu ene-electron mobility ye-70 cm2 / Vs okanye ngaphezulu iyafuneka.
UNjingalwazi onguNcedisi uMago kunye neqela lakhe baphuhlise i-TFT ene-electron mobility ye-140 cm2/Vs 2022, besebenzisa ifilimu ebhityileyoi-idium oxide (In2O3)yomaleko osebenzayo. Nangona kunjalo, ayizange isetyenziswe ngokufanelekileyo ngenxa yokuba ukuzinza kwayo (ukuthembeka) kwakubi kakhulu ngenxa ye-adsorption kunye nokuchithwa kwee-molecule zegesi emoyeni.
Ngeli xesha, iqela lophando ligqibe ekubeni ligqume umphezulu womaleko obhityileyo osebenzayo kunye nefilimu ekhuselayo ukuthintela igesi ukuba ingabhengezwa emoyeni. Iziphumo zovavanyo zibonise ukuba ii-TFTs ezineefilimu ezikhuselayo zei-yttrium oxidekwayei-erbium oxideibonise uzinzo oluphezulu kakhulu. Ngaphezu koko, ukuhamba kwe-electron kwakungama-78 cm2 / Vs, kwaye iimpawu azizange zitshintshe nangona i-voltage ye-± 20V isetyenziswe kwiiyure ze-1.5, ezihlala zizinzile.
Ngakolunye uhlangothi, ukuzinza akuzange kuphuculwe kwi-TFTs eyayisebenzisa i-hafnium oxide okanyei-aluminium oxidenjengeefilim ezikhuselayo. Xa ilungiselelo leathom lalijongwa kusetyenziswa i-electron microscope, kwafunyaniswa ukubai-idium oxide kwayei-yttrium oxide ziboshwe ngokuqinileyo kwinqanaba le-athomu (ukukhula kwe-heteroepitaxial). Ngokwahlukileyo, kwaqinisekiswa ukuba kwii-TFTs ukuzinza kwazo akuzange kuphuculwe, i-interface phakathi kwe-indium oxide kunye nefilimu ekhuselayo yayiyi-amorphous.