Rakabudiswa muna Nyamavhuvhu 9, 2024, na15:30 EE Times Japan
Boka rekutsvagisa kubva kuJapan Hokkaido University rakagadzira pamwe chete "oxyde thin-film transistor" ine erekitironi kufamba kwe78cm2/Vs uye kugadzikana kwakanyanya neKochi University of Technology. Izvo zvinogoneka kutyaira zviratidziro zvechizvarwa chinotevera 8K OLED TVs.
Iyo pamusoro peiyo inoshanda layer yakaonda firimu yakafukidzwa nefirimu inodzivirira, inovandudza zvakanyanya kugadzikana
Muna Nyamavhuvhu 2024, boka rekutsvagisa rinosanganisira Mubatsiri Muzvinafundo Yusaku Kyo naProfessor Hiromichi Ota veResearch Institute for Electronic Science, Hokkaido University, vachibatsirana naProfessor Mamoru Furuta weChikoro cheScience and Technology, Kochi University of Technology, vakazivisa kuti yakagadzira "oxide thin-film transistor" ine electron mobility ye 78cm2 / Vs uye kugadzikana kwakanakisisa. Izvo zvinogoneka kutyaira zviratidziro zvechizvarwa chinotevera 8K OLED TVs.
Iyezvino 4K OLED TVs anoshandisa oxide-IGZO yakaonda-firimu transistors (a-IGZO TFTs) kutyaira zviratidziro. Kufamba kwe electron ye transistor iyi inenge 5 kusvika 10 cm2 / Vs. Nekudaro, kutyaira chidzitiro chechizvarwa chinotevera 8K OLED TV, oxide yakaonda-firimu transistor ine erekitironi mobility ye 70 cm2/Vs kana kupfuura inodiwa.
Assistant Professor Mago nechikwata chake vakagadzira TFT ine electron mobility ye 140 cm2/Vs 2022, vachishandisa firimu nhete re.indium oxide (In2O3)kune iyo inoshanda layer. Zvakadaro, haina kuiswa pakushandisa zvine hungwaru nekuti kugadzikana kwayo (kuvimbika) kwaive kwakashata zvakanyanya nekuda kweadsorption uye desorption yemamorekuru egasi mumhepo.
Panguva ino, boka rekutsvagisa rakasarudza kuvhara pamusoro peiyo yakaonda inoshanda dhizaini neinodzivirira firimu kudzivirira gasi kubva pakushambadza mumhepo. Mhedzisiro yekuedza yakaratidza kuti TFTs ine ekudzivirira mafirimu eyttrium oxideuyeerbium oxideyakaratidza kugadzikana kwakanyanya. Uyezve, kufamba kwe electron kwaiva 78 cm2 / Vs, uye maitiro haana kuchinja kunyange kana magetsi e ± 20V akaiswa kwemaawa 1.5, akasara akagadzikana.
Kune rumwe rutivi, kugadzikana hakuna kuvandudza muTFTs yakashandisa hafnium oxide kanaaluminium oxidesemafirimu anodzivirira. Apo kurongwa kweatomu kwakaonekwa pachishandiswa electron microscope, zvakaonekwa kutiindium oxide uyeyttrium oxide dzakanga dzakasungwa zvakasimba paatomic level (heteroepitaxial kukura). Kusiyana neizvi, zvakasimbiswa kuti muTFTs iyo kugadzikana kwayo haina kuvandudza, kuwirirana pakati pe indium oxide uye firimu yekudzivirira yaiva amorphous.